Titelanzeige
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Fink, R. (Autor)
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Koch, T. (Autor)
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Krausch, Georg (Autor)
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Marien, J. (Autor)
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Plewnia, A. (Autor)
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Runge, B.-U. (Autor)
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Schatz, G. (Autor)
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Siber, A. (Autor)
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Ziemann, P. (Autor)
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Titel: |
Formation of an ultrathin amorphous layer at In/Pd interfaces observed by local and nonlocal techniques
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Quelle: |
Physical review : B. Bd. 47. H. 15. College Park, Md. : APS. S. 10048 - 10051 |
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Erscheinungsjahr: |
1993 |
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ISBN / ISSN: |
1095-3795 ; 1098-0121 |
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URL der Originalveröffentlichung |
doi:10.1103/PhysRevB.47.10048
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Dokumentart: |
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Zeitschriftenaufsatz |  |
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Sprache: |
Englisch |
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Open Access: |
— |
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Person der Universität: |
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Einrichtung: |
Universitätsleitung |
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DDC-Sachgruppe: |
Physik |
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ID: |
53290  |
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Hinweis: |
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Abstract: |
The perturbed γγ-angular correlation technique has been used to study In/Pd(100) interfaces using In 111 isotopes as local probes. A thin amorphous interface layer is found after In deposition at 77 K. Above 350 K, crystalline In/Pd compounds are formed starting with In 3 Pd. This sequence and especially the formation of an amorphous interface has been corroborated by studying the resistance of ultrathin In/Pd multilayers during film growth at 90 K. The previously unknown amorphous In 3 Pd phase was identified by in situ electron diffraction on vapor-quenched films. |
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Verfügbarkeit prüfen: |
Rechercheportal Mainz: 1095-3795/1098-0121
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Elektronische Zeitschriftenbibliothek (EZB): 1095-3795 oder 1098-0121
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