Titelanzeige
| Personen: |
Fink, R. (Autor)
|
|
Koch, T. (Autor)
|
|
Krausch, Georg (Autor)
|
|
Marien, J. (Autor)
|
|
Plewnia, A. (Autor)
|
|
Runge, B.-U. (Autor)
|
|
Schatz, G. (Autor)
|
|
Siber, A. (Autor)
|
|
Ziemann, P. (Autor)
|
| | |
|
Titel: |
Formation of an ultrathin amorphous layer at In/Pd interfaces observed by local and nonlocal techniques
|
| | |
|
Quelle: |
Physical review : B. Bd. 47. H. 15. College Park, Md. : APS. S. 10048 - 10051 |
|
Erscheinungsjahr: |
1993 |
|
ISBN / ISSN: |
1095-3795 ; 1098-0121 |
|
URL der Originalveröffentlichung |
doi:10.1103/PhysRevB.47.10048
|
| | |
|
Dokumentart: |
|
Zeitschriftenaufsatz |  |
|
|
Sprache: |
Englisch |
|
Open Access: |
— |
|
Person der Universität: |
|
|
Einrichtung: |
Universitätsleitung |
|
DDC-Sachgruppe: |
Physik |
|
ID: |
53290  |
|
Hinweis: |
|
|
Abstract: |
The perturbed γγ-angular correlation technique has been used to study In/Pd(100) interfaces using In 111 isotopes as local probes. A thin amorphous interface layer is found after In deposition at 77 K. Above 350 K, crystalline In/Pd compounds are formed starting with In 3 Pd. This sequence and especially the formation of an amorphous interface has been corroborated by studying the resistance of ultrathin In/Pd multilayers during film growth at 90 K. The previously unknown amorphous In 3 Pd phase was identified by in situ electron diffraction on vapor-quenched films. |
|
|
|
| | |
|
Verfügbarkeit prüfen: |
Rechercheportal Mainz: 1095-3795/1098-0121
|
|
|
KatalogPortal Mainz (inklusive FB 06): 1095-3795/1098-0121 |
|
|
Elektronische Zeitschriftenbibliothek (EZB): 1095-3795 oder 1098-0121
|
| |
|
|
